View MBR1100RL_741837.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MBR1100
Preferred Device
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes.
http://onsemi.com
* * * * * * * *
Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature High Surge Capacity
SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS
Mechanical Characteristics:
* Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead and Mounting Surface Temperature for Soldering Purposes: * * * *
220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: B1100
AXIAL LEAD CASE 59-10 DO-41 PLASTIC
Leads are Readily Solderable
MARKING DIAGRAM
MBR 1100 MBR1100 = Device Code
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (VR(equiv) 0.2 VR(dc), RqJA = 50C/W, P.C. Board Mounting, see Note 1, TA = 120C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating and Storage Junction Temperature Range Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IO Max 100 Unit V
1.0
A
ORDERING INFORMATION
Device IFSM 50 A MBR1100 MBR1100RL TJ, Tstg dv/dt -65 to +150 10 C
Preferred devices are recommended choices for future use and best overall value.
Package Axial Lead Axial Lead
Shipping 1000 Units/Bag 5000/Tape & Reel
V/ns
(c) Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 4
Publication Order Number: MBR1100/D
MBR1100
THERMAL CHARACTERISTICS (See Note 2)
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max See Note 1 Unit C/W
ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted)
Characteristic Maximum Instantaneous Forward Voltage * (iF = 1 A, TL = 25C) (iF = 1 A, TL = 100C) Maximum Instantaneous Reverse Current @ Rated dc Voltage * (TL = 25C) (TL = 100C) * Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. Symbol VF 0.79 0.69 iR 0.5 5.0 mA Max Unit Volt
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 vF, INSTANTANEOUS VOLTAGE (VOLTS) TJ = 150C 100C 25C
IR , REVERSE CURRENT ( mA)
1K 400 200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01
TJ = 150C 125C 100C
0
10
20
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current { { The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR.
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
4.0
4.0
3.0 dc 2.0 SQUARE WAVE 1.0
3.0
SQUARE WAVE dc
2.0
1.0
0
0
20
40
60
80
100
120
140
160
180
200
0
0
1.0
2.0
3.0
4.0
5.0
TA, AMBIENT TEMPERATURE (C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Current Derating (Mounting Method 3 per Note 1)
Figure 4. Power Dissipation
http://onsemi.com
2
MBR1100
150 100 90 80 70 60 50 40 30 20 15 0 10 20 30 40 50 60 70 80 90 100
NOTE 2 -- THERMAL CIRCUIT MODEL: (For heat conduction through the leads)
RqS(A) RqL(A) RqJ(A) RqJ(K) PD TL(A) TC(A) TJ TC(K) TL(K) RqL(K) RqS(K) TA(K)
C, CAPACITANCE (pF)
TJ = 25C fTEST = 1 MHz
TA(A)
VR, REVERSE VOLTAGE (VOLTS)
Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heat Sink to Ambient RqL = Thermal Resistance, Lead to Heat Sink RqJ = Thermal Resistance, Junction to Case PD = Power Dissipation (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 100C/W/in typically and 120C/W/in maximum. RJ = 36C/W typically and 46C/W maximum.
NOTE 3 -- HIGH FREQUENCY OPERATION:
Figure 5. Typical Capacitance NOTE 1 -- MOUNTING DATA:
Data shown for thermal resistance junction-to-ambient (RqJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured.
Typical Values for RqJA in Still Air
Mounting Method 1 2 3 Lead Length, L (in) 1/8 52 67 -- 1/4 65 80 1/2 72 87 50 3/4 85 100 RqJA C/W C/W C/W
Mounting Method 1 P.C. Board with 1-1/2 x 1-1/2 copper surface.
Mounting Method 3 P.C. Board with 1-1/2 x 1-1/2 copper surface.
L
L
L = 3/8
Mounting Method 2
BOARD GROUND PLANE
L
L
Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 5) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.
EEEEEEEE EEEEEEEE E E E EEEEEEEE E EEEEEEEE
VECTOR PIN MOUNTING
http://onsemi.com
3
MBR1100
PACKAGE DIMENSIONS
AXIAL LEAD, DO-41 CASE 59-10 ISSUE S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 59-04 OBSOLETE, NEW STANDARD 59-09. 4. 59-03 OBSOLETE, NEW STANDARD 59-10. 5. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY 6. POLARITY DENOTED BY CATHODE BAND. 7. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 --- 0.050 1.000 --- MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 --- 1.27 25.40 ---
B
K F
D
A F K
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
http://onsemi.com
4
MBR1100/D

▲Up To Search▲

Price & Availability of MBR1100RL

	To Download MBR1100RL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .